Napson Corporation manufactures and sells 2 kinds of resistance measurement equipment.

Contact types with 4-point probe and Non-contact types, such as eddy current measurement.

Here are the electrical resistance principles which can be measured by Napson resistance measurement systems.

Contact types with 4-point probe and Non-contact types, such as eddy current measurement.

Here are the electrical resistance principles which can be measured by Napson resistance measurement systems.

**The definition of resistance measurement**

Generally, electrical resistance is used as an inverse measure of the conductivity (Ease of electric conductance) of a substance or material.

“As a valuation basis of electrical resistance, the unit Ω(ohm)is used.”

**Electric Resistance ＝ Ω (Ohm) R= V/I**

where V= Voltage, I= Current.

where V= Voltage, I= Current.

The electrical resistance measurement methods for a semiconductor or thin film measurement are defined by standards, such as SEMI (ASTM) and JIS.

Resistivity＝ Ω-cm (ohm-centimeter)[also know as Volume Resistivity, or bulk resistivity]

Electrical resistance: When the electric resistivity is ρ, the length is L and cross-sectional area for a conductor is A

R is given by ;

Where ρ is given by

The volume is shown by cubic measure, such as 1cm x 1cm x 1cm.

Volume Resistivity may be shown by Ω-m (ohm meter) depending on the measuring object.

The term “sheet resistance” is used for a sheet of a material (such as a thin film or a film-like substance).

R is given by ;

**R ＝ ρ × [L/A]**Where ρ is given by

**ρ ＝ V/I × [A/L]**The volume is shown by cubic measure, such as 1cm x 1cm x 1cm.

Volume Resistivity may be shown by Ω-m (ohm meter) depending on the measuring object.

**Sheet resistance ＝ Ω/□ (ohms per square)**The term “sheet resistance” is used for a sheet of a material (such as a thin film or a film-like substance).

When it expresses three-dimensional conductivity, resistance is given by

When the length of a sample [L] and the width [W] are equal (i.e. a Cubic Volume), the resistance [R] and he sheet resistance [ρ] will become equal.

This describes the resistance measurement principle for a contact type (4-point probe measurement method)

Four metallic probe pins are applied to the surface of a specimen,typically linearly, and current is made to flow through the two outer most probe pins.

When the difference in potental between the tow intermediate probe pins is measured , the resistivity ( or sheet resistance) can be found from the shown equation.

*Resistivity measurement & sheet resistance measurement are the same measurement principle.

4-point probe measurement systems made by Napson serve as a measuring method and the compensation method based on JIS and an ASTM (SEMI) standards.

This system is relied upon as the industrial standard measurement systemfor Silicon wafers/ingots.

Moreover, it provides traceability to NIST (National Institute Standard Technologies[USA]) standards and resistivity samples.

Instruments/ systems are shipped after calibrations and careful testing with standard samples at the factory.

**R ＝ ρ × L/A ＝ L/W ×ρs**When the length of a sample [L] and the width [W] are equal (i.e. a Cubic Volume), the resistance [R] and he sheet resistance [ρ] will become equal.

**MEASUREMENT METHODS****Contact : 4-point probe measurement**This describes the resistance measurement principle for a contact type (4-point probe measurement method)

Four metallic probe pins are applied to the surface of a specimen,typically linearly, and current is made to flow through the two outer most probe pins.

When the difference in potental between the tow intermediate probe pins is measured , the resistivity ( or sheet resistance) can be found from the shown equation.

*Resistivity measurement & sheet resistance measurement are the same measurement principle.

4-point probe measurement systems made by Napson serve as a measuring method and the compensation method based on JIS and an ASTM (SEMI) standards.

This system is relied upon as the industrial standard measurement systemfor Silicon wafers/ingots.

Moreover, it provides traceability to NIST (National Institute Standard Technologies[USA]) standards and resistivity samples.

Instruments/ systems are shipped after calibrations and careful testing with standard samples at the factory.

**Measurement principle (Resistivity)**

**Measurement principle (Sheet Resistance)**http://www.monozukuri.org/mono/db-dmrc/pvdcvddb/outline/evaluation/fourprobeelectricalresistivity.html

The Napson 4-point probe method instrument complies with the following Japanese Industrial Standards (JIS)and American Society for Testing and Materials (ASTM):

**Japan Industrial Standards**

- JIS H 0602-1995 Testing Method Of Resistivity For Silicon Crystals And Silicon Wafers With Four-point Probe
- JIS K 7194-1994 Testing method for resistivity of conductive plastics with a four-point probe array

**American Society for Testing and Materials**

- ASTM F 84-99（SEMI MF84）Standard Test Method for Measuring Resistivity of Silicon Wafers With an In-line Four-Point Probe
- ASTM F 374-00a Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
- ASTM F 390-11 Standard Test Method for Sheet Resistance of Thin Metallic Films With an Collinear Four-Probe Array
- ASTM F 1529-97 Standard Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure

**Non-contact: Eddy current measurement**

This describes the resistance measurement principle for the non- contact type (eddy current method).

(*With Napson products, there are also instruments for other non-contact resistance measurement methods according to the resistance range.

Please contact us about non-contact type measurement principles other than an eddy current method.)

The non-contact type (eddy current method) performs measurement of resistivity and sheet resistance by using the eddy current which occurs by electromagnetic induction within a specimen.

An eddy current is circular current which forms in a conductor due to electromagnetic induction [Lenz’s law], when the magnetic flux which passes along a conductor changes.

The magnetic flux is changed by adding high frequency component between the probes (magnetic body), arranged on both

sides (upper and lower sides) between the fixed gap, where an eddy current flows through the sample inserted between gaps.

(*Napson can offer other models with one side probe version)

The eddy current flows into the direction which resists change of the magnetic flux by electromagnetic induction [Lenz’s law].

sides (upper and lower sides) between the fixed gap, where an eddy current flows through the sample inserted between gaps.

(*Napson can offer other models with one side probe version)

The eddy current flows into the direction which resists change of the magnetic flux by electromagnetic induction [Lenz’s law].

**Pc = Et・I = Et(Io + Ie）**

Where

Where

**Pc**: High-frequency consumed power

**I**: High-frequency drive current

**Et**: High-frequency voltage

**Io**: High-frequency drive current [Without sample]

**Ie**: High-frequency drive current [at the sample measurement]

The absorption of high-frequency power in the sample by the generated eddy current is lost as Joule heat.

The resistivity/sheet resistance of the sample can be measured with the non-contact method by measuring the absorption value of high-frequency power,

because this absorption and the conductivity (reciprocal of resistivity) and thickness of a sample have a direct relationship.

(*The Joule heat is so small that neither the sample nor the area is affected.)

Moreover, the influence of contact resistance in the case of a contact type can be eliminated.

**Explanation of Non-contact (Dual probes ) and Non-destructive(Single probe)**

http://www.monozukuri.org/mono/db-dmrc/pvdcvddb/outline/evaluation/eddycurrentelectricalresistivity.html

As mentioned above, the resistivity ( or sheet resistance) is measured by inserting a sample in the gap between the probes.

Therefore, restrictions on the form of a probe depend upon the thickness and corresponding size of a sample.

– Restrictions of the thickness of a sample : the gap between probes is usually 2 mm.

– Restrictions of the size of a sample :A large specimen has a limit on the measurement head.