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Wafer Mapping - 4 Point Contact

Multi-Point Mapping Systems for measuring Sheet Resistance and Resistivity

RT-3000/RG-2000

Description

  • User programmable measurement pattern

  • Self-test function, wide measuring range

  • Thickness, edge, temperature correction for silicon wafer

  • Film thickness conversion function from sheet resistance

Applications

  • Semiconductor materials, Solar-cell materials

  • New materials, structured materials (Carbon nanotube, DLC, graphene, Ag nanowire etc)

  • Conductive thin film (Metal, ITO etc)

  • Diffused layers layer)

  • ​

  • Silicon-related epitaxial materials, Ion-implantation sample

Sample sizes:

- 8 inch, ~156x156mm
-Option(Large size stage: Model RG-3000); ~12 inch, ~210x210mm

Measuring range

  1. 1. RT-3000/S version: 

           [R] 100μ~1M Ω・cm
           [RS] 1m~10M Ω/sq

  1. 2. RT-3000/H version:

           [RS] 10mΩ/sq?1GΩ/sq

CresBox

Description

​

  • Small Footprint  Version

  • ​User programmable measurement pattern
  • Self-test function, wide measuring range

  • Thickness, edge, temperature correction for silicon wafer

  • Film thickness conversion function from sheet resistance


​Applications

  • Semiconductor materials, Solar-cell materials (Silicon, Polysilicon, SiC etc)

  • New materials, functional materials (Carbon nanotube, DLC, graphene, Ag nanowire etc)

  • Conductive thin film (Metal, ITO etc)

  • Diffused sample (or layer)

  • Silicon-related epitaxial materials, Ion-implantation sample

  • Others (*Please contact us for details)


Sample sizes:  ~ 8 inch, ~156x156mm

Measuring range: 
[R] 1m~300k Ω・cm
[RS] 5m~10M Ω/sq

RG-200PV

​Description

  • Customized specifically for Solar wafers

  • User programmable measurement pattern

  • Self-test function, wide measuring range

  • Thickness, & temperature correction for silicon wafer

  • Film thickness conversion function from sheet resistance

Applications

  • Mono / polycrystalline silicon cells, epitaxial wafers

  • Conductive thin film (Metal, ITO etc)

  • Diffused sample (or layer)

  • Silicon-related epitaxial materials, Ion-implantation sample

  • Other sizes and options (*Please contact us for details)


Sample sizes:  To 160x 160 mm
Thickness: 100 um to 5 mm

Measuring range: 
[R] 1m~300k Ω・cm
[RS] 5m~10M Ω/sq

Automated wafer mapping for resistivity by 4 point probe method
Small Footprint Automated wafer mapping for resistivity by 4 point probe method
Solar wafer mapping for resistivity by 4 point probe method
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